DMMT2907A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power - Max :

900mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

JESD-609 Code :

e3

Element Configuration :

Dual

Transistor Application :

SWITCHING

Transistor Type :

2 PNP (Dual)

Turn On Time-Max (ton) :

21ns

Collector Emitter Voltage (VCEO) :

1.6V

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

307MHz

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

600mA

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

-60V

Max Power Dissipation :

1.28W

Transition Frequency :

307MHz

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Package / Case :

SOT-23-6

Collector Emitter Breakdown Voltage :

60V

Polarity :

PNP

Continuous Collector Current :

-600mA

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

Number of Terminations :

6

Pin Count :

6

Additional Feature :

High Reliability

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

10nA ICBO

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Base Part Number :

DMMT2907

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

60V

Published :

2013

Mounting Type :

Surface Mount

Turn Off Time-Max (toff) :

200ns