DMMT5401-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

JESD-30 Code :

R-PDSO-G6

Peak Reflow Temperature (Cel) :

235

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

50

JESD-609 Code :

e0

Max Breakdown Voltage :

150V

REACH SVHC :

No SVHC

Number of Terminations :

6

Lead Free :

Contains Lead

Pin Count :

6

Continuous Collector Current :

-200mA

Weight :

29.993795mg

Number of Elements :

2

ECCN Code :

EAR99

Power - Max :

300mW

Collector Base Voltage (VCBO) :

160V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

No

Width :

1.6mm

Published :

2007

Base Part Number :

DMMT5401

Polarity :

PNP

Collector Emitter Breakdown Voltage :

150V

Transition Frequency :

100MHz

Transistor Type :

2 PNP (Dual) Matched Pair

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Current Rating :

-200mA

Height :

1.1mm

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

300MHz

Voltage - Rated DC :

-150V

Reach Compliance Code :

Unknown

Length :

3mm

Package / Case :

SOT-23-6

Emitter Base Voltage (VEBO) :

-5V

Max Collector Current :

200mA

Terminal Finish :

TIN LEAD

Collector Emitter Voltage (VCEO) :

500mV