DMA561080R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

-50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 10V

Published :

2010

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 10

Length :

2mm

Max Collector Current :

100mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Width :

1.25mm

Max Power Dissipation :

150mW

Height :

600μm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

5

Max Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

-250mV

RoHS Status :

RoHS Compliant

Resistor - Emitter Base (R2) :

5.1k Ω

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Dual

Number of Elements :

2

Package / Case :

5-SMD, Flat Leads

Mount :

Surface Mount

Number of Pins :

5

Polarity :

PNP

Base Part Number :

DMA56108

Resistor - Base (R1) :

510 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

-100mA

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks