DMA501010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Cut Tape (CT)

Collector Emitter Voltage (VCEO) :

500mV

Emitter Base Voltage (VEBO) :

-7V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Transistor Type :

2 PNP (Dual)

Power - Max :

150mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Current - Collector Cutoff (Max) :

100μA

hFE Min :

210

Number of Pins :

5

Reach Compliance Code :

Unknown

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Operating Temperature :

150°C TJ

Package / Case :

5-SMD, Flat Leads

Mounting Type :

Surface Mount

Mount :

Surface Mount

Length :

2mm

Gain Bandwidth Product :

150MHz

Max Breakdown Voltage :

50V

RoHS Status :

RoHS Compliant

Number of Terminations :

5

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

-500mV

Polarity :

PNP

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Element Configuration :

Dual

Height :

600μm

Continuous Collector Current :

-100mA

Number of Elements :

2

Width :

1.25mm

Base Part Number :

DMA50101

Transition Frequency :

150MHz