DF200R12W1H3B27BOMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

NTC Thermistor :

yes

Lead Free :

Contains Lead

Input Capacitance (Cies) @ Vce :

2nF @ 25V

JESD-30 Code :

R-XUFM-X18

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

1.3V @ 15V, 30A

Power - Max :

375W

Additional Feature :

UL APPROVED

Number of Elements :

2

Polarity/Channel Type :

N-Channel

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

Not Applicable

Turn Off Time-Nom (toff) :

475 ns

Turn On Time :

40 ns

Published :

2002

Surface Mount :

No

Mounting Type :

Chassis Mount

Number of Terminations :

18

Configuration :

2 Independent

Current - Collector (Ic) (Max) :

30A

Package / Case :

Module

Case Connection :

Isolated

Operating Temperature :

-40°C~150°C

Voltage - Collector Emitter Breakdown (Max) :

1200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Transistor Application :

POWER CONTROL

Input :

Standard

Terminal Form :

UNSPECIFIED

Halogen Free :

Not Halogen Free

Current - Collector Cutoff (Max) :

1mA