DF200R12KE3HOSA1

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Mfr.Part #
DF200R12KE3HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 1200V 1040W
Stock
290
In Stock :
290

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Power - Max :
1040W
Number of Pins :
5
Factory Lead Time :
14 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Turn Off Time-Nom (toff) :
830 ns
Input :
Standard
Input Capacitance (Cies) @ Vce :
14nF @ 25V
NTC Thermistor :
No
Number of Terminations :
5
Published :
2012
Turn On Time :
400 ns
Number of Elements :
1
Mount :
Screw
Current - Collector Cutoff (Max) :
5mA
Collector Emitter Saturation Voltage :
1.7V
Case Connection :
Isolated
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Package / Case :
Module
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Lead Free :
Lead Free
Terminal Position :
UPPER
Halogen Free :
Not Halogen Free
Collector Emitter Voltage (VCEO) :
1.2kV
Pin Count :
5
Transistor Element Material :
SILICON
Max Collector Current :
295A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Power Dissipation :
1.04kW
Operating Temperature :
-40°C~125°C
Mounting Type :
Chassis Mount
Configuration :
Single
RoHS Status :
RoHS Compliant
Terminal Form :
UNSPECIFIED
Datasheets
DF200R12KE3HOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies DF200R12KE3HOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Number of Terminations:5, Package / Case:Module, Operating Temperature:-40°C~125°C, Mounting Type:Chassis Mount, DF200R12KE3HOSA1 pinout, DF200R12KE3HOSA1 datasheet PDF, DF200R12KE3HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies DF200R12KE3HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies DF200R12KE3HOSA1


DF200R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

DF200R12KE3HOSA1                                  Description   

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

DF200R12KE3HOSA1                                   Applications

· Air Conditioning

· Motor Drives

· Servo Drives

· UPS Systems

DF200R12KE3HOSA1                                   Features

· Low Switching Losses

· Low VCEsat

· Trench IGBT 4

· VCEsatwith positive Temperature Coefficient

 

Mechanical Features

· AlzO Substrate with Low Thermal Resistance

· Compact design

· PressFIT Contact Technology

· Rugged Duplex frame construction   

 

 

 


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