DDTC114ECAQ-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Collector-Emitter Voltage-Max :

50 V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

Manufacturer :

Diodes Incorporated

Reference Standard :

AEC-Q101

Collector Current-Max (IC) :

0.05 A

Product Category :

Bipolar Transistors - Pre-Biased

DC Current Gain-Min (hFE) :

35

Voltage - Collector Emitter Breakdown (Max) :

50 V

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

100 mA

JESD-609 Code :

e3

RoHS :

Details

Product Status :

Active

Resistor - Emitter Base (R2) :

10 kOhms

Terminal Form :

Gull wing

Number of Terminals :

3

Resistor - Base (R1) :

10 kOhms

Package / Case :

TO-236-3, SC-59, SOT-23-3

Subcategory :

Transistors

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Package :

Tape and Reel (TR)

Supplier Device Package :

SOT-23-3

Factory Lead Time :

19 Weeks

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

NPN

Brand :

Diodes Incorporated

Transistor Element Material :

SILICON

Packaging :

MouseReel

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA, 5V

Power Dissipation-Max (Abs) :

0.2 W

Power - Max :

200 mW

Pbfree Code :

yes

Frequency - Transition :

250 MHz

Surface Mount :

yes

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Transistor Type :

NPN - Pre-Biased