DDTC113TE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Frequency - Transition :

250MHz

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Base Part Number :

DDTC113

Package / Case :

SOT-523

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA ICBO

Voltage - Collector Emitter Breakdown (Max) :

50V

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR

Number of Terminations :

3

Terminal Position :

Dual

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

NPN

Pin Count :

3

Factory Lead Time :

19 Weeks

Current - Collector (Ic) (Max) :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

1 k Ω

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

Not Qualified

Transistor Type :

NPN - Pre-Biased

Power Dissipation-Max (Abs) :

0.15W

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Published :

2007

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Elements :

1

Power - Max :

150mW