DDTA113ZE-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Factory Lead Time :

19 Weeks

Resistor - Emitter Base (R2) :

10 k Ω

Width :

800μm

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-523

Max Power Dissipation :

150mW

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

hFE Min :

33

Max Operating Temperature :

150°C

Height :

750μm

Number of Elements :

1

Polarity :

PNP

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Weight :

2.012816mg

Pbfree Code :

yes

Length :

1.6mm

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Pins :

3

Published :

2007

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

1 k Ω

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 10mA 5V

JESD-609 Code :

e3

Base Part Number :

DDTA113

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Frequency - Transition :

250MHz

Number of Terminations :

3

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V