DDTA113TE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Frequency - Transition :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Max Collector Current :

100mA

JESD-609 Code :

e3

Resistor - Base (R1) :

1 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

Terminal Position :

Dual

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Pin Count :

3

Transistor Type :

PNP - Pre-Biased

hFE Min :

100

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

150mW

Polarity :

PNP

Lead Free :

Lead Free

Base Part Number :

DDTA113

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Qualification Status :

Not Qualified

Weight :

2.012816mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

Voltage - Rated DC :

-50V

Current Rating :

-100mA

Terminal Form :

Gull wing

Pbfree Code :

yes

Number of Elements :

1

Continuous Collector Current :

100mA

HTS Code :

8541.21.00.75

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-523

Additional Feature :

BUILT IN BIAS RESISTOR

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Published :

2007

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

500nA ICBO

Mounting Type :

Surface Mount

Width :

800μm

Height :

750μm

ECCN Code :

EAR99

Number of Pins :

3

Length :

1.6mm

Factory Lead Time :

18 Weeks