DCP68-25-13
- Mfr.Part #
- DCP68-25-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223-3
- Stock
- 48,854
- In Stock :
- 48,854
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 5V
- Transition Frequency :
- 330MHz
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Length :
- 6.5mm
- Package / Case :
- TO-261-4, TO-261AA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- DCP68
- Collector Emitter Voltage (VCEO) :
- 20V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Width :
- 3.5mm
- Published :
- 2008
- Gain Bandwidth Product :
- 330MHz
- Height :
- 1.6mm
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 20V
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Power Dissipation :
- 1W
- Frequency :
- 330MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 1V
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 1A
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- DCP68-25-13

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DCP68-25-13 Overview
In this device, the DC current gain is 160 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.330MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
DCP68-25-13 Features
the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
DCP68-25-13 Applications
There are a lot of Diodes Incorporated
DCP68-25-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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