DCP69-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Weight :

7.994566mg

Pbfree Code :

yes

Transistor Type :

PNP

Pin Count :

4

Factory Lead Time :

19 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 1V

Height :

1.6mm

Radiation Hardening :

No

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Frequency :

200MHz

Max Collector Current :

1A

Max Breakdown Voltage :

20V

Base Part Number :

DCP69

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

200MHz

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

25V

Collector Emitter Breakdown Voltage :

20V

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Saturation Voltage :

-500mV

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Transition Frequency :

200MHz

Length :

6.5mm

Element Configuration :

Single

Width :

3.5mm

Collector Emitter Voltage (VCEO) :

20V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1W

Number of Pins :

4

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

Emitter Base Voltage (VEBO) :

-5V

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Number of Terminations :

4

Max Power Dissipation :

1W

Number of Elements :

1