DCP52-16-13
- Mfr.Part #
- DCP52-16-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223-3
- Stock
- 2,895
- In Stock :
- 2,895
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Pin Count :
- 4
- Base Part Number :
- DCP52
- Power - Max :
- 1W
- Packaging :
- Cut Tape (CT)
- Weight :
- 7.994566mg
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -1A
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Factory Lead Time :
- 17 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Frequency :
- 200MHz
- Published :
- 2011
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -500mV
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 200MHz
- Length :
- 6.7mm
- Emitter Base Voltage (VEBO) :
- -5V
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Max Power Dissipation :
- 1W
- Width :
- 3.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- hFE Min :
- 25
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- DCP52-16-13

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
DCP52-16-13 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
DCP52-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCP52-16-13 Applications
There are a lot of Diodes Incorporated
DCP52-16-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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