DCP56-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.7mm

hFE Min :

25

Gain Bandwidth Product :

200MHz

Collector Emitter Voltage (VCEO) :

80V

Published :

1997

Base Part Number :

DCP56

Collector Base Voltage (VCBO) :

100V

Power Dissipation :

1W

Frequency :

200MHz

Continuous Collector Current :

1A

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Collector Emitter Saturation Voltage :

500mV

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Width :

3.7mm

Weight :

7.994566mg

Pin Count :

4

Collector Emitter Breakdown Voltage :

80V

Max Power Dissipation :

1W

Polarity/Channel Type :

NPN

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Transition Frequency :

200MHz

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Max Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

5V

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount

Max Collector Current :

1A

Factory Lead Time :

24 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Height :

1.65mm

Radiation Hardening :

No