CSD19537Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Threshold Voltage :

3V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 10A, 10V

Base Part Number :

CSD19537

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 50V

Number of Pins :

8

Avalanche Energy Rating (Eas) :

55 mJ

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3 ns

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Turn On Delay Time :

5 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

NexFET™

Package / Case :

8-PowerVDFN

ECCN Code :

EAR99

Number of Terminations :

5

Thickness :

1mm

Width :

3.3mm

Power Dissipation :

2.8W

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Factory Lead Time :

6 Weeks

Number of Channels :

1

Terminal Form :

NO LEAD

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9.7A

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Rise Time :

3ns

Contact Plating :

Copper, Tin

Drain to Source Breakdown Voltage :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

2.8W Ta 83W Tc

Turn-Off Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

Length :

3.3mm