CSD13202Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

20 mJ

Number of Pins :

6

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e4

Base Part Number :

CSD13302

Series :

NexFET™

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation-Max :

2.7W Ta

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 6V

Terminal Form :

NO LEAD

Turn-Off Delay Time :

11 ns

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Package / Case :

6-VDFN Exposed Pad

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

22A Ta

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2.7W

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Continuous Drain Current (ID) :

22A

Length :

2mm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Fall Time (Typ) :

13.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Width :

2mm

RoHS Status :

ROHS3 Compliant

Rise Time :

28ns

Threshold Voltage :

800mV

Lead Free :

Lead Free

Turn On Delay Time :

4.5 ns

ECCN Code :

EAR99

Thickness :

750μm

Drain to Source Breakdown Voltage :

12V

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Contact Plating :

Tin

Number of Channels :

1