CSD13202Q2
- Mfr.Part #
- CSD13202Q2
- Manufacturer
- Texas Instruments
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 22A 6WSON
- Stock
- 7,000
- In Stock :
- 7,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 800mV
- ECCN Code :
- EAR99
- Terminal Form :
- NO LEAD
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 5A, 4.5V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Package / Case :
- 6-VDFN Exposed Pad
- Turn On Delay Time :
- 4.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.7W Ta
- Series :
- NexFET™
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 11 ns
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 997pF @ 6V
- Drain to Source Breakdown Voltage :
- 12V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- JESD-609 Code :
- e4
- Power Dissipation :
- 2.7W
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2mm
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 6.6nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Thickness :
- 750μm
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Base Part Number :
- CSD13302
- Continuous Drain Current (ID) :
- 22A
- Width :
- 2mm
- Contact Plating :
- Tin
- Rise Time :
- 28ns
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Fall Time (Typ) :
- 13.6 ns
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- CSD13202Q2

N-Channel Tape & Reel (TR) 9.3m Ω @ 5A, 4.5V ±8V 997pF @ 6V 6.6nC @ 4.5V 6-VDFN Exposed Pad
The CSD13202Q2 12-V N-Channel NexFET? Power MOSFETs have been designed to reduce losses in power conversion and load management applications. The SON 2 2 has good thermal performance considering its small size.
CSD13202Q2 Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package
CSD13202Q2 Applications
Optimized for Control FET Applications
Point of Load Synchronous Buck Converters
Optimized for Load Switch Applications
Storage, Tablets, and Handheld Devices
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