CSD13202Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD13302

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

20 mJ

Power Dissipation :

2.7W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Rise Time :

28ns

Element Configuration :

Single

REACH SVHC :

No SVHC

Length :

2mm

Factory Lead Time :

8 Weeks

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

12V

Continuous Drain Current (ID) :

22A

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 5A, 4.5V

ECCN Code :

EAR99

Pbfree Code :

yes

Fall Time (Typ) :

13.6 ns

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Thickness :

750μm

Number of Pins :

6

Terminal Position :

Dual

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

NexFET™

Package / Case :

6-VDFN Exposed Pad

Number of Terminations :

6

Number of Channels :

1

Turn On Delay Time :

4.5 ns

Threshold Voltage :

800mV

Contact Plating :

Tin

Case Connection :

DRAIN

Turn-Off Delay Time :

11 ns

Power Dissipation-Max :

2.7W Ta

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 6V

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Width :

2mm

Lead Free :

Lead Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V