CSD13202Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Form :

NO LEAD

Contact Plating :

Tin

Thickness :

750μm

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

2.7W

Threshold Voltage :

800mV

Length :

2mm

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.7W Ta

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Package / Case :

6-VDFN Exposed Pad

Transistor Application :

SWITCHING

Rise Time :

28ns

Avalanche Energy Rating (Eas) :

20 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN

Fall Time (Typ) :

13.6 ns

Number of Channels :

1

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Transistor Element Material :

SILICON

Number of Pins :

6

Base Part Number :

CSD13302

Series :

NexFET™

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Width :

2mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

12V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 5A, 4.5V

Vgs (Max) :

±8V

Turn-Off Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Continuous Drain Current (ID) :

22A

Lead Free :

Lead Free

JESD-609 Code :

e4