CSD13302W

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

29A

Power Dissipation-Max :

1.8W Ta

Mount :

Surface Mount

Package / Case :

4-UFBGA, DSBGA

Continuous Drain Current (ID) :

1.6A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

12V

Base Part Number :

CSD13302

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

17.1m Ω @ 1A, 4.5V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ULTRA LOW RESISTANCE

DS Breakdown Voltage-Min :

12V

Number of Elements :

1

Element Configuration :

Single

Width :

0m

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

625μm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

17 ns

Turn On Delay Time :

6 ns

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

862pF @ 6V

Number of Pins :

4

Contact Plating :

Copper, Silver, Tin

Fall Time (Typ) :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Thickness :

650μm

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

10V

Feedback Cap-Max (Crss) :

196 pF

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain-source On Resistance-Max :

0.0285Ohm

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

Length :

0m

Terminal Form :

Ball