CSD19536KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.18mm

Lead Free :

Contains Lead

Rise Time :

8ns

Feedback Cap-Max (Crss) :

61 pF

Height :

4.83mm

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.0028Ohm

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Width :

8.41mm

Turn-Off Delay Time :

32 ns

Thickness :

4.44mm

Series :

NexFET™

Turn On Delay Time :

13 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

806 mJ

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Fall Time (Typ) :

6 ns

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Terminal Form :

Gull wing

Power Dissipation-Max :

375W Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

FET Type :

N-Channel

Base Part Number :

CSD19536

Continuous Drain Current (ID) :

200A

Contact Plating :

Tin

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)