CSD19536KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Turn-Off Delay Time :

32 ns

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Number of Elements :

1

Width :

8.41mm

Rise Time :

8ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Length :

10.18mm

Continuous Drain Current (ID) :

200A

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Power Dissipation :

375W

Number of Pins :

3

Fall Time (Typ) :

6 ns

Number of Channels :

1

Factory Lead Time :

6 Weeks

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Drain-source On Resistance-Max :

0.0028Ohm

Avalanche Energy Rating (Eas) :

806 mJ

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Vgs (Max) :

±20V

Contact Plating :

Tin

Series :

NexFET™

Lead Free :

Contains Lead

Max Junction Temperature (Tj) :

175°C

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

CSD19536

Mounting Type :

Surface Mount

Power Dissipation-Max :

375W Tc

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Thickness :

4.44mm

Height :

4.83mm

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2