CSD19536KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Number of Channels :

1

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

38 ns

Avalanche Energy Rating (Eas) :

806 mJ

Rise Time :

8ns

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Continuous Drain Current (ID) :

150A

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Height :

4.7mm

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

2.5V

Operating Mode :

ENHANCEMENT MODE

Series :

NexFET™

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

CSD19536

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Length :

10.16mm

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Fall Time (Typ) :

5 ns

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Pbfree Code :

yes

Turn On Delay Time :

14 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

150A Ta

Power Dissipation-Max :

375W Tc

Package / Case :

TO-220-3

Packaging :

Tube

Thickness :

4.58mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Case Connection :

DRAIN

Lead Free :

Lead Free

Width :

8.7mm

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Factory Lead Time :

8 Weeks

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Weight :

6.000006g

JESD-609 Code :

e3