CSD19535KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Rise Time :

18ns

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Turn On Delay Time :

9 ns

Thickness :

4.44mm

Turn-Off Delay Time :

21 ns

Length :

10.18mm

Drain-source On Resistance-Max :

0.0041Ohm

Lead Free :

Contains Lead

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Contact Plating :

Tin

Width :

8.41mm

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

451 mJ

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Case Connection :

DRAIN

Height :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

CSD19535

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Power Dissipation-Max :

300W Tc

Number of Elements :

1

Continuous Drain Current (ID) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

7930pF @ 50V