CSD19535KCS
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- Mfr.Part #
- CSD19535KCS
- Manufacturer
- Texas Instruments
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 150A TO220-3
- Stock
- 5,300
- In Stock ：
- 5,300
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.000006g
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 150A
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Length :
- 10.16mm
- Vgs(th) (Max) @ Id :
- 3.4V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 101nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 150A Ta
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- CSD19535
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 100A, 10V
- Power Dissipation-Max :
- 300W Tc
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 4.7mm
- Series :
- NexFET™
- Rise Time :
- 15ns
- Threshold Voltage :
- 2.7V
- Power Dissipation :
- 300W
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 5 ns
- Turn On Delay Time :
- 32 ns
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 60 ns
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 7930pF @ 50V
- Width :
- 8.7mm
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 400A
- Thickness :
- 4.58mm
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- CSD19535KCS
N-Channel Tube 3.6m Ω @ 100A, 10V ±20V 7930pF @ 50V 101nC @ 10V TO-220-3
CSD19535KCS Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7930pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.7V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
CSD19535KCS Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
a threshold voltage of 2.7V
CSD19535KCS Applications
There are a lot of Texas Instruments
CSD19535KCS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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