CSD19534KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Mount :

Through Hole

Element Configuration :

Single

Feedback Cap-Max (Crss) :

7.4 pF

Package / Case :

TO-220-3

Threshold Voltage :

2.8V

RoHS Status :

Non-RoHS Compliant

Contact Plating :

Tin

Packaging :

Tube

JESD-609 Code :

e3

Mounting Type :

Through Hole

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

22.2nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation-Max :

118W Tc

Number of Pins :

3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 50V

Base Part Number :

CSD19534

Width :

8.7mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 30A, 10V

ECCN Code :

EAR99

Length :

10.16mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Turn-Off Delay Time :

9 ns

Thickness :

4.58mm

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.02Ohm

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

1 ns

Operating Temperature :

-55°C~175°C TJ

Height :

4.7mm

Turn On Delay Time :

6 ns

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

54 mJ

Rise Time :

2ns