CSD19533Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 13A, 10V

Fall Time (Typ) :

5 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Thickness :

1mm

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

100V

Series :

NexFET™

Mount :

Surface Mount

Turn On Delay Time :

6 ns

Base Part Number :

CSD19533

Length :

4.9mm

Terminal Position :

Dual

JESD-609 Code :

e3

Power Dissipation-Max :

3.2W Ta 96W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Rise Time :

6ns

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Terminal Form :

NO LEAD

Contact Plating :

Tin

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Height :

1.1mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

13A

ECCN Code :

EAR99

Number of Pins :

8

Number of Elements :

1

Power Dissipation :

3.2W

Width :

6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Number of Channels :

1

Turn-Off Delay Time :

16 ns

Package / Case :

8-PowerTDFN

Threshold Voltage :

2.8V