CSD19533KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2.8V

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Continuous Drain Current (ID) :

100A

Number of Pins :

3

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Mounting Type :

Through Hole

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 55A, 10V

Width :

8.7mm

Reach Compliance Code :

not_compliant

Base Part Number :

CSD19533

Turn On Delay Time :

7 ns

Rise Time :

5ns

ECCN Code :

EAR99

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

188W Tc

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Turn-Off Delay Time :

12 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 50V

Number of Channels :

1

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

2 ns

Mount :

Through Hole

Thickness :

4.58mm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Weight :

6.000006g

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Height :

4.7mm

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

207A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.16mm