CSD19532Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

CSD19532

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

8-PowerTDFN

Surface Mount :

yes

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

274 mJ

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 17A, 10V

Drain Current-Max (Abs) (ID) :

17A

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Number of Terminations :

5

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Width :

6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

3.1W Ta 195W Tc

Drain-source On Resistance-Max :

0.0057Ohm

FET Type :

N-Channel

JESD-609 Code :

e3

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

4810pF @ 50V

Terminal Position :

Dual

Terminal Form :

NO LEAD

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Number of Pins :

8

Thickness :

950μm