CSD19532Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

5mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Thickness :

950μm

Terminal Form :

NO LEAD

Number of Elements :

1

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Series :

NexFET™

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

3.1W Ta 195W Tc

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4810pF @ 50V

Surface Mount :

yes

Width :

6mm

Drain-source On Resistance-Max :

0.0057Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

274 mJ

ECCN Code :

EAR99

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 17A, 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

17A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Base Part Number :

CSD19532

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ