CSD19531Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 16A, 10V

Rise Time :

5.8ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Thickness :

1mm

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

NO LEAD

Fall Time (Typ) :

5.2 ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

337A

Turn-Off Delay Time :

18.4 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Threshold Voltage :

2.7V

Turn On Delay Time :

6 ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

100A

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.3V @ 250μA

Power Dissipation-Max :

3.3W Ta 125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3870pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Series :

NexFET™

Base Part Number :

CSD19531

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Length :

4.9mm

Number of Pins :

8

Number of Terminations :

5

Contact Plating :

Tin

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Width :

6mm