CSD19531KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Contact Plating :

Tin

Power Dissipation :

179W

Fall Time (Typ) :

4.1 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain-source On Resistance-Max :

0.0088Ohm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Height :

4.7mm

Reach Compliance Code :

not_compliant

Weight :

6.000006g

FET Type :

N-Channel

Factory Lead Time :

6 Weeks

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Base Part Number :

CSD19531

Drain to Source Voltage (Vdss) :

100V

Threshold Voltage :

2.7V

Input Capacitance (Ciss) (Max) @ Vds :

3870pF @ 50V

Package / Case :

TO-220-3

Series :

NexFET™

Thickness :

4.58mm

Power Dissipation-Max :

214W Tc

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Width :

8.7mm

Number of Pins :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

105A

Pulsed Drain Current-Max (IDM) :

285A

Turn On Delay Time :

8.4 ns

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Rise Time :

7.2ns

Pbfree Code :

yes

Turn-Off Delay Time :

16 ns

Vgs(th) (Max) @ Id :

3.3V @ 250μA

Length :

10.16mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Case Connection :

DRAIN

JESD-609 Code :

e3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 60A, 10V

Element Configuration :

Single