CSD19506KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

80V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

80V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

200A

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Length :

10.18mm

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Factory Lead Time :

6 Weeks

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Width :

8.41mm

Base Part Number :

CSD19506

Number of Pins :

3

Number of Terminations :

3

Series :

NexFET™

Power Dissipation-Max :

375W Tc

Height :

4.83mm

Feedback Cap-Max (Crss) :

55 pF

Transistor Element Material :

SILICON

Thickness :

4.44mm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0028Ohm

FET Type :

N-Channel