CSD19506KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

80V

Drain-source On Resistance-Max :

0.0028Ohm

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

6.000006g

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Height :

4.7mm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

375W Tc

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Mount :

Through Hole

Thickness :

4.58mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Elements :

1

Rise Time :

11ns

Drain to Source Voltage (Vdss) :

80V

Width :

8.7mm

Factory Lead Time :

6 Weeks

Case Connection :

DRAIN

Turn On Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Continuous Drain Current (ID) :

273A

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

55 pF

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

FET Type :

N-Channel

Base Part Number :

CSD19506

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

12200pF @ 40V

Threshold Voltage :

2.5V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

REACH SVHC :

No SVHC

Fall Time (Typ) :

10 ns

Length :

10.16mm

Turn-Off Delay Time :

30 ns

Packaging :

Tube

Transistor Application :

SWITCHING

Pin Count :

3