CSD19505KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Lead Free :

Contains Lead

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

8 Weeks

Reach Compliance Code :

not_compliant

Series :

NexFET™

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Height :

4.83mm

DS Breakdown Voltage-Min :

80V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Element Configuration :

Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Width :

8.41mm

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

510 mJ

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Length :

10.18mm

Continuous Drain Current (ID) :

200A

Drain to Source Voltage (Vdss) :

80V

Input Capacitance (Ciss) (Max) @ Vds :

7920pF @ 40V

Thickness :

4.44mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pulsed Drain Current-Max (IDM) :

400A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Form :

Gull wing

Base Part Number :

CSD19505

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 100A, 10V