CSD19505KTT
- Mfr.Part #
- CSD19505KTT
- Manufacturer
- Texas Instruments
- Package / Case
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 200A DDPAK
- Stock
- 3,783
- In Stock :
- 3,783
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.2V @ 250μA
- Continuous Drain Current (ID) :
- 200A
- FET Type :
- N-Channel
- Base Part Number :
- CSD19505
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 2.6V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Package / Case :
- TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 400A
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 7920pF @ 40V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- NexFET™
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 100A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 200A Ta
- Power Dissipation-Max :
- 300W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 80V
- Avalanche Energy Rating (Eas) :
- 510 mJ
- JESD-609 Code :
- e3
- Height :
- 4.83mm
- Thickness :
- 4.44mm
- Lead Free :
- Contains Lead
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 80V
- Additional Feature :
- AVALANCHE RATED
- Length :
- 10.18mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 8.41mm
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- CSD19505KTT

N-Channel Tape & Reel (TR) 3.1m Ω @ 100A, 10V ±20V 7920pF @ 40V 76nC @ 10V 80V TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
CSD19505KTT Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 510 mJ.A device's maximal input capacitance is 7920pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.6V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 80V.This transistor requires a 80V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
CSD19505KTT Features
the avalanche energy rating (Eas) is 510 mJ
a continuous drain current (ID) of 200A
based on its rated peak drain current 400A.
a threshold voltage of 2.6V
a 80V drain to source voltage (Vdss)
CSD19505KTT Applications
There are a lot of Texas Instruments
CSD19505KTT applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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