CSD19505KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD19505

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Channels :

1

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

400A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7820pF @ 40V

Power Dissipation-Max :

300W Tc

Series :

NexFET™

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Width :

8.7mm

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 100A, 6V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

10.16mm

Number of Elements :

1

Rise Time :

16ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

150A Ta

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Element Configuration :

Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

31 ns

Package / Case :

TO-220-3

Number of Pins :

3

Power Dissipation :

300W

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

150A

Height :

4.7mm

Number of Terminations :

3

Weight :

6.000006g

Thickness :

4.58mm

Pbfree Code :

yes

Vgs (Max) :

±20V

Turn-Off Delay Time :

62 ns

Drain to Source Breakdown Voltage :

80V

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Contact Plating :

Tin

Fall Time (Typ) :

6 ns