CSD19502Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Mount :

Surface Mount

FET Type :

N-Channel

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

400A

Width :

6mm

Transistor Application :

SWITCHING

Length :

5mm

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

22 pF

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Avalanche Energy Rating (Eas) :

274 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 40V

REACH SVHC :

No SVHC

Number of Elements :

1

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

17A

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Threshold Voltage :

2.7V

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

100A

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 19A, 10V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Thickness :

950μm

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

CSD19502

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.1W Ta 195W Tc

Number of Terminations :

5

Number of Pins :

8

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Terminal Form :

NO LEAD

Drain to Source Voltage (Vdss) :

80V

Vgs(th) (Max) @ Id :

3.3V @ 250μA

Package / Case :

8-PowerTDFN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

NexFET™