CSD19501KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Height :

4.7mm

Length :

10.16mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Rise Time :

15ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.2V @ 250μA

Packaging :

Tube

Drain to Source Breakdown Voltage :

80V

Fall Time (Typ) :

5 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain-source On Resistance-Max :

0.0079Ohm

Vgs (Max) :

±20V

Thickness :

4.58mm

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 60A, 10V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Case Connection :

DRAIN

Transistor Application :

SWITCHING

FET Type :

N-Channel

Element Configuration :

Single

Weight :

6.000006g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Number of Pins :

3

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

39 ns

Continuous Drain Current (ID) :

100A

Series :

NexFET™

Width :

8.7mm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Base Part Number :

CSD19501

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 40V

ECCN Code :

EAR99

Threshold Voltage :

2.6V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Contact Plating :

Tin

Pbfree Code :

yes

Power Dissipation-Max :

217W Tc

Factory Lead Time :

16 Weeks