CSD18563Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.2W Ta 116W Tc

Thickness :

1mm

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Length :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

96A

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

1.7 ns

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

11.4 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Rise Time :

6.3ns

Transistor Application :

SWITCHING

Number of Channels :

1

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

100A

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Contact Plating :

Tin

FET Type :

N-Channel

Threshold Voltage :

2V

Height :

1.1mm

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Turn On Delay Time :

3.2 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Series :

NexFET™

Factory Lead Time :

6 Weeks

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 18A, 10V

Pbfree Code :

yes

Width :

6mm

Mount :

Surface Mount

Vgs (Max) :

±20V

Base Part Number :

CSD18563

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN