CSD18563Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Case Connection :

DRAIN

Width :

6mm

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

11.4 ns

Current - Continuous Drain (Id) @ 25°C :

100A Ta

JESD-609 Code :

e3

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 18A, 10V

Terminal Form :

NO LEAD

Threshold Voltage :

2V

Height :

1.1mm

Base Part Number :

CSD18563

Element Configuration :

Single

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

1.7 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Series :

NexFET™

Number of Channels :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Packaging :

Tape and Reel (TR)

Length :

4.9mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Thickness :

1mm

Turn On Delay Time :

3.2 ns

Pulsed Drain Current-Max (IDM) :

96A

Power Dissipation-Max :

3.2W Ta 116W Tc

Contact Plating :

Tin

Number of Pins :

8

Transistor Element Material :

SILICON

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Rise Time :

6.3ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V