CSD18563Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Threshold Voltage :

2V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

3.2 ns

Packaging :

Tape and Reel (TR)

Width :

6mm

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

15A

Nominal Vgs :

2 V

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Single

Number of Channels :

1

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Length :

4.9mm

Series :

NexFET™

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 18A, 10V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Contact Plating :

Tin

Power Dissipation-Max :

3.2W Ta 116W Tc

Reach Compliance Code :

not_compliant

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drain Current-Max (Abs) (ID) :

93A

Rise Time :

6.3ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

100A Ta

JESD-609 Code :

e3

Number of Pins :

8

Fall Time (Typ) :

1.7 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

11.4 ns

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Height :

1.1mm

Thickness :

1mm

Pulsed Drain Current-Max (IDM) :

96A

Drain to Source Breakdown Voltage :

60V

Base Part Number :

CSD18563

Power Dissipation :

3.2W

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING