CSD18537NQ5AT
- Mfr.Part #
- CSD18537NQ5AT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A 8VSON
- Stock
- 43
- In Stock :
- 43
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 12A, 10V
- Fall Time (Typ) :
- 3.2 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 14.4 ns
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- 8-PowerTDFN
- Base Part Number :
- CSD18537
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Feedback Cap-Max (Crss) :
- 5.2 pF
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 8
- Rise Time :
- 4ns
- Width :
- 6mm
- Turn On Delay Time :
- 5.8 ns
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta
- Thickness :
- 1mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1480pF @ 30V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- Height :
- 1.1mm
- Reach Compliance Code :
- not_compliant
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 50A
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Series :
- NexFET™
- Power Dissipation-Max :
- 3.2W Ta 75W Tc
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Number of Terminations :
- 5
- Lead Free :
- Contains Lead
- Length :
- 4.9mm
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-609 Code :
- e3
- Datasheets
- CSD18537NQ5AT

N-Channel Tape & Reel (TR) 13m Ω @ 12A, 10V ±20V 1480pF @ 30V 18nC @ 10V 8-PowerTDFN
CSD18537NQ5AT Description
CSD18537NQ5AT is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 60V. The operating temperature of CSD18537NQ5AT is -55°C~150°C TJ and its maximum power dissipation is 75W Tc. This 10 mΩ, 60 V, SON 5 mm x 6 mm NexFET? power MOSFET is designed to minimize losses in power conversion applications.
CSD18537NQ5AT Features
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free Terminal Plating
-
SON 5 mm × 6 mm Plastic Package
CSD18537NQ5AT Applications
-
High-Side Synchronous Buck Converter
-
Motor Control
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