CSD18537NQ5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Width :

6mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Nominal Vgs :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 30V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Turn-Off Delay Time :

14.4 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rise Time :

4ns

Number of Pins :

8

Mounting Type :

Surface Mount

Power Dissipation :

3.2W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn On Delay Time :

5.8 ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta 50A Tc

Package / Case :

8-PowerTDFN

Fall Time (Typ) :

3.2 ns

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Transistor Element Material :

SILICON

Series :

NexFET™

Number of Terminations :

5

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

5.2 pF

Element Configuration :

Single

Contact Plating :

Copper, Tin

Drain to Source Breakdown Voltage :

60V

Drain Current-Max (Abs) (ID) :

50A

Continuous Drain Current (ID) :

11A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

13m Ω @ 12A, 10V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Avalanche Energy Rating (Eas) :

55 mJ

Height :

1.1mm

Number of Channels :

1

Base Part Number :

CSD18537

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Mount :

Surface Mount

FET Type :

N-Channel

Lead Free :

Contains Lead

Power Dissipation-Max :

3.2W Ta 75W Tc

Thickness :

1mm

Length :

4.9mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE