CSD18536KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Pins :

3

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Width :

8.41mm

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Thickness :

4.44mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Height :

4.83mm

Transistor Application :

SWITCHING

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Pulsed Drain Current-Max (IDM) :

400A

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Input Capacitance (Ciss) (Max) @ Vds :

11430pF @ 30V

Power Dissipation-Max :

375W Tc

Length :

10.18mm

Series :

NexFET™

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

819 mJ

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

51 pF

Base Part Number :

CSD18536

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

200A

Drain-source On Resistance-Max :

0.0022Ohm

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260