CSD18536KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0022Ohm

Fall Time (Typ) :

12 ns

Pbfree Code :

yes

Series :

NexFET™

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8 ns

Number of Pins :

3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Avalanche Energy Rating (Eas) :

819 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

CSD18536

JESD-609 Code :

e3

Number of Elements :

1

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Package / Case :

TO-220-3

Lead Free :

Contains Lead

Thickness :

4.58mm

Pulsed Drain Current-Max (IDM) :

400A

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Rise Time :

17ns

Input Capacitance (Ciss) (Max) @ Vds :

11430pF @ 30V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

375W Tc

Contact Plating :

Copper, Tin

Height :

4.7mm

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 10V

ECCN Code :

EAR99

Length :

10.16mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

23 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Feedback Cap-Max (Crss) :

51 pF

Packaging :

Tube

Width :

8.7mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

200A

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Operating Temperature :

-55°C~175°C TJ