CSD18534Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.9V

Turn On Delay Time :

5.2 ns

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Power Dissipation :

3.1W

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 30V

Series :

NexFET™

Current - Continuous Drain (Id) @ 25°C :

13A Ta 50A Tc

Feedback Cap-Max (Crss) :

6.5 pF

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Rise Time :

5.5ns

Pulsed Drain Current-Max (IDM) :

229A

Length :

4.9mm

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Lead Free :

Contains Lead

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

3.1W Ta 77W Tc

Thickness :

1mm

Pbfree Code :

yes

Nominal Vgs :

1.9 V

Contact Plating :

Tin

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Number of Pins :

8

Case Connection :

DRAIN

Element Configuration :

Single

Number of Elements :

1

JESD-609 Code :

e3

Fall Time (Typ) :

2 ns

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Width :

6mm

Vgs(th) (Max) @ Id :

2.3V @ 250μA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Number of Terminations :

5

Base Part Number :

CSD18534

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 14A, 10V

Radiation Hardening :

No

Continuous Drain Current (ID) :

50A

Gate to Source Voltage (Vgs) :

20V