CSD18533Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

17A Ta 100A Tc

Avalanche Energy Rating (Eas) :

140 mJ

Resistance :

4.7MOhm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Length :

4.9mm

Vgs (Max) :

±20V

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

267A

Drain Current-Max (Abs) (ID) :

17A

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 18A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Factory Lead Time :

6 Weeks

Feedback Cap-Max (Crss) :

9 pF

Transistor Application :

SWITCHING

Fall Time (Typ) :

2 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Rise Time :

5.5ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Element Configuration :

Single

Continuous Drain Current (ID) :

100A

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

NO LEAD

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

2750pF @ 30V

JESD-609 Code :

e3

Power Dissipation-Max :

3.2W Ta 116W Tc

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

5.2 ns

Number of Elements :

1

Base Part Number :

CSD18533

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

RoHS Status :

ROHS3 Compliant

Thickness :

1mm

Additional Feature :

AVALANCHE RATED

Width :

6mm

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns