CSD18532Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

400A

Contact Plating :

Tin

FET Type :

N-Channel

Turn-Off Delay Time :

22 ns

ECCN Code :

EAR99

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain Current-Max (Abs) (ID) :

23A

Number of Pins :

8

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

6mm

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Fall Time (Typ) :

3.1 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Lead Free :

Contains Lead

Number of Terminations :

5

Feedback Cap-Max (Crss) :

17 pF

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Continuous Drain Current (ID) :

100A

Avalanche Energy Rating (Eas) :

320 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5.8 ns

Series :

NexFET™

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate to Source Voltage (Vgs) :

20V

Thickness :

950μm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5070pF @ 30V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0043Ohm

Rise Time :

7.2ns

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Terminal Form :

NO LEAD

Power Dissipation-Max :

3.2W Ta 156W Tc

Base Part Number :

CSD18532

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)