CSD18532Q5B
- Mfr.Part #
- CSD18532Q5B
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A 8VSON
- Stock
- 5,128
- In Stock :
- 5,128
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 7.2ns
- Max Junction Temperature (Tj) :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 5
- Terminal Form :
- NO LEAD
- Base Part Number :
- CSD18532
- Continuous Drain Current (ID) :
- 23A
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- NexFET™
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Number of Elements :
- 1
- Number of Channels :
- 1
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 25A, 10V
- Height :
- 1.05mm
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 400A
- Turn-Off Delay Time :
- 22 ns
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Thickness :
- 950μm
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 1.5V
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Contains Lead
- Drain-source On Resistance-Max :
- 0.0043Ohm
- Fall Time (Typ) :
- 3.1 ns
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 5.8 ns
- Width :
- 6mm
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Power Dissipation :
- 3.2W
- Package / Case :
- 8-PowerTDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Length :
- 5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5070pF @ 30V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- CSD18532Q5B

N-Channel Tape & Reel (TR) 3.2m Ω @ 25A, 10V ±20V 5070pF @ 30V 58nC @ 10V 8-PowerTDFN
CSD18532Q5B Description
CSD18532Q5B emerges as an N-Channel NexFET? power MOSFET with ultra-low Qg and Qgd, and low thermal resistance. As a result, it is well suited for motor control, DC-DC conversion, synchronous rectification, and isolated converter primary-side switch.
CSD18532Q5B Features
-
Logic level
-
Ultra-low Qg and Qgd
-
Low-thermal resistance
-
Available in the Q5B package
CSD18532Q5B Applications
-
Motor control
-
DC-DC conversion
-
Secondary side synchronous rectifier
-
Isolated converter primary side switch
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