CSD18531Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

19A

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

100A

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Turn-Off Delay Time :

20 ns

Vgs (Max) :

±20V

Number of Elements :

1

JESD-609 Code :

e3

Terminal Form :

NO LEAD

Rise Time :

7.8ns

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Base Part Number :

CSD18531

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Feedback Cap-Max (Crss) :

14 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 30V

Pulsed Drain Current-Max (IDM) :

400A

Fall Time (Typ) :

2.7 ns

Terminal Position :

Dual

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 22A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

224 mJ

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4.4 ns

Number of Pins :

8

Pbfree Code :

yes

Power Dissipation-Max :

3.1W Ta 156W Tc

Width :

6mm

Operating Temperature :

-55°C~150°C TJ

Thickness :

1mm

Series :

NexFET™

Transistor Element Material :

SILICON

Resistance :

3.5mOhm

Package / Case :

8-PowerTDFN

Element Configuration :

Single