CSD18531Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.3V @ 250μA

REACH SVHC :

No SVHC

Turn On Delay Time :

4.4 ns

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

175°C

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 30V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 22A, 10V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

224 mJ

Radiation Hardening :

No

Threshold Voltage :

1.8V

Series :

NexFET™

Height :

1.1mm

Element Configuration :

Single

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Turn-Off Delay Time :

20 ns

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Nominal Vgs :

1.8 V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

2.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.1W Ta 156W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pbfree Code :

yes

Vgs (Max) :

±20V

Length :

4.9mm

Mount :

Surface Mount

Case Connection :

DRAIN

Base Part Number :

CSD18531

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Number of Channels :

1

Rise Time :

7.8ns

Number of Terminations :

5

Thickness :

1mm

Continuous Drain Current (ID) :

100A

Current - Continuous Drain (Id) @ 25°C :

19A Ta 100A Tc

Package / Case :

8-PowerTDFN

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

156W

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain to Source Breakdown Voltage :

60V