CSD18514Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 15A, 10V

Power Dissipation-Max :

74W Tc

Element Configuration :

Single

ECCN Code :

EAR99

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Pulsed Drain Current-Max (IDM) :

237A

Series :

NexFET™

Terminal Position :

Dual

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.0079Ohm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Terminal Form :

NO LEAD

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Thickness :

1mm

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Surface Mount :

yes

Width :

6mm

Factory Lead Time :

16 Weeks

Length :

4.9mm

Number of Pins :

8

Base Part Number :

CSD18514

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

55 mJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tape and Reel (TR)