CSD18513Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0053Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 19A, 10V

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

4280pF @ 20V

Peak Reflow Temperature (Cel) :

260

Length :

4.9mm

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

124A Tc

Number of Pins :

8

Mounting Type :

Surface Mount

Series :

NexFET™

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

22A

Terminal Finish :

Matte Tin (Sn)

Thickness :

1mm

Transistor Element Material :

SILICON

Base Part Number :

CSD18513

Feedback Cap-Max (Crss) :

231 pF

Surface Mount :

yes

Number of Elements :

1

Element Configuration :

Single

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

400A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.4V @ 250μA

FET Type :

N-Channel

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

106 mJ

Power Dissipation-Max :

96W Tc

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)