CSD18512Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6mm

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

211A Tc

Pulsed Drain Current-Max (IDM) :

400A

Terminal Position :

Dual

Pbfree Code :

yes

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e4

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Length :

5mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Thickness :

950μm

Power Dissipation-Max :

139W Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

7120pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Base Part Number :

CSD18512

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 30A, 10V

Avalanche Energy Rating (Eas) :

205 mJ

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Feedback Cap-Max (Crss) :

333 pF

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

N-Channel

Series :

NexFET™

Drain Current-Max (Abs) (ID) :

32A

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0023Ohm

Surface Mount :

yes

Number of Pins :

8

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)